BAS16TT1G Silicon Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit 3 1 Continuous Reverse Voltage VR 100 V CATHODE ANODE Recurrent Peak Forward Current IF 200 mA Peak Forward Surge Current IFM(surge) 500 mA Pulse Width = 10 (cid:2)s MARKING THERMAL CHARACTERISTICS DIAGRAM Characteristic Symbol Max Unit 3 CASE 463 Total Device Dissipation, PD SOT−416 A6 M(cid:2) FR−4 Board (Note 1) 225 mW 2 STYLE 2 (cid:2) TA = 25°C 1 Derated above 25°C 1.8 mW/°C 1 Thermal Resistance, R(cid:3)JA 555 °C/W XX = Specific Device Code Junction−to−Ambient (Note 1) M = Date Code (cid:2) = Pb−Free Package Total Device Dissipation, PD FR−4 Board (Note 2) 360 mW TA = 25°C Derated above 25°C 2.9 mW/°C ORDERING INFORMATION Thermal Resistance, R(cid:3)JA 345 °C/W Device Package Shipping† Junction−to−Ambient (Note 2) BAS16TT1G SOT−416 3000 / Tape & Reel Junction and Storage TJ, Tstg −55 to °C (Pb−Free) Temperature Range +150 †For information on tape and reel specifications, Stresses exceeding Maximum Ratings may damage the device. Maximum including part orientation and tape sizes, please Ratings are stress ratings only. Functional operation above the Recommended refer to our Tape and Reel Packaging Specifications Operating Conditions is not implied. Extended exposure to stresses above the Brochure, BRD8011/D. Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: May, 2013 − Rev. 4 BAS16TT1/D

BAS16TT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Forward Voltage VF mV (IF = 1.0 mA) − 715 (IF = 10 mA) − 866 (IF = 50 mA) − 1000 (IF = 150 mA) − 1250 Reverse Current IR (cid:2)A (VR = 100 V) − 1.0 (VR = 75 V, TJ = 150°C) − 50 (VR = 25 V, TJ = 150°C) − 30 Capacitance CD − 2.0 pF (VR = 0, f = 1.0 MHz) Reverse Recovery Time trr − 6.0 ns (IF = IR = 10 mA, RL = 50 (cid:4)) (Figure 1) Stored Charge QS − 45 PC (IF = 10 mA to VR = 6.0 V, RL = 500 (cid:4)) (Figure 2) Forward Recovery Voltage VFR − 1.75 V (IF = 10 mA, tr = 20 ns) (Figure 3) http://onsemi.com 2

BAS16TT1G 1 ns MAX t 500 (cid:4) DUT 10% trr tif 50 (cid:4) DUTY CYCLE = 2% 90% VF Irr 100 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit OSCILLOSCOPE R (cid:2) 10 M(cid:2) C (cid:3) 7 pF VC 500 (cid:4) DUT BAW62 20 ns MAX VCM D1 243 pF 100 K(cid:4) t 10% VCM(cid:2)Qa C DUTY CYCLE = 2% t 90% Vf 400 ns Figure 2. Stored Charge Equivalent Test Circuit V 120 ns 1 K(cid:4) 450 (cid:4) V 90% DUT 50 (cid:4) Vfr 10% t DUTY CYCLE = 2% 2 ns MAX Figure 3. Forward Recovery Voltage Equivalent Test Circuit http://onsemi.com 3

BAS16TT1G 100 10 TA = 150°C NT (mA) 10 μENT (A) 1.0 TA = 125°C E R R R UR TA = 85°C CU TA = 85°C D C SE 0.1 R R RWA 1.0 TA = 25°C REVE TA = 55°C , FOF TA = -(cid:2)40°C I, R0.01 I TA = 25°C 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 4. Forward Voltage Figure 5. Leakage Current 0.68 F) E (p 0.64 C N A T CI PA 0.60 A C E D O DI , D 0.56 C 0.52 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance E C AN 1.0 T S D = 0.5 SI E R L 0.2 A M 0.1 R 0.1 E H 0.05 T T N E 0.02 SI N A TR 0.01 0.01 D E Z ALI SINGLE PULSE M R O N 0.001 r(t), 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t, TIME (s) Figure 7. Normalized Thermal Response http://onsemi.com 4

BAS16TT1G PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE F −E− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 MILLIMETERS INCHES 3 e −D− DIM MIN NOM MAX MIN NOM MAX A 0.70 0.80 0.90 0.027 0.031 0.035 1 b3 PL A1 0.00 0.05 0.10 0.000 0.002 0.004 b 0.15 0.20 0.30 0.006 0.008 0.012 0.20 (0.008) M D C 0.10 0.15 0.25 0.004 0.006 0.010 HE 0.20 (0.008) E D 1.55 1.60 1.65 0.059 0.063 0.067 E 0.70 0.80 0.90 0.027 0.031 0.035 e 1.00 BSC 0.04 BSC L 0.10 0.15 0.20 0.004 0.006 0.008 HE 1.50 1.60 1.70 0.061 0.063 0.065 C STYLE 2: A PIN 1.ANODE 2.N/C 3.CATHODE L A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.787 0.071 0.031 0.508 0.020 1.000 0.039 (cid:3) (cid:4) mm SCALE 10:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com BAS16TT1/D 5

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