AUIRFR3504
HEXFET
®
Power MOSFET
08/30/11
www.irf.com 1
PD - 97687A
S
D
G
GDS
Gate Drain Source
D-Pak
AUIRFR3504
G
S
D
AUTOMOTIVE GRADE
Features
l Advanced Planar Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V
(BR)DSS
40V
R
DS(on)
typ.
7.8m
Ω
max
9.2m
I
D (Silicon Limited)
87A
I
D (Package Limited)
56A
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited) A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) mJ
E
AS
(tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.09
R
θJA
Junction-to-Ambient (PCB Mount) ––– 50 °C/W
R
θJA
Junction-to-Ambient ––– 110
-55 to + 175
300
140
0.92
± 20
Max.
87
61
350
56
480
240
See Fig. 12a, 12b, 15, 16
