Preliminary data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
January 2010 Doc ID 16984 Rev 1 1/7
7
2STF2280
Low voltage high performance PNP power transistor
Features
■ Low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
Applications
■ DC-DC converter, voltage regulation
■ General purpose switching equipment
Description
The device is a PNP transistor manufactured
using new “PB-HCD” (power bipolar high current
density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
Figure 1. Internal schematic diagram
SOT-89
4
3
2
1
Table 1. Device summary
Order code Marking Package Packaging
2STF2280 2280 SOT-89 Tape and reel
www.st.com
