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isc N-Channel MOSFET Transistor 2SK1156
FEATURES
·Drain Current –I
D
= 5.0A@ T
C
=25℃
·Drain Source Voltage-
: V
DSS
= 500V(Min)
·Static Drain-Source On-Resistance
: R
DS(on)
= 1.5Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
THERMAL CHARACTERISTICS
Gate-Source Voltage-Continuous
Drain Current-Single Pluse
Total Dissipation @T
C
=25℃
Max. Operating Junction Temperature
Thermal Resistance, Junction to Case
