April 2011 Doc ID 018729 Rev 1 1/10
10
2SD1047
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage V
CEO
= 140 V
■ Typical f
t
= 20 MHz
■ Fully characterized at 125
o
C
Application
■ Power supply
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Figure 1. Internal schematic diagram
TO-3P
1
2
3
Table 1. Device summary
Order code Marking Package Packaging
2SD1047 2SD1047 TO-3P Tube
www.st.com
