2SC5714
2006-11-10
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5714
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
• High DC current gain: h
FE
= 400 to 1000 (I
C
= 0.5 A)
• Low collector-emitter saturation voltage: V
CE (sat)
= 0.15 V (max)
• High-speed switching: t
f
= 90 ns (typ.)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
40 V
Collector-emitter voltage V
CEX
30 V
Collector-emitter voltage V
CEO
20 V
Emitter-base voltage V
EBO
7 V
DC I
C
4
Collector current
Pulse I
CP
7
A
Base current I
B
400 mA
DC 1.0
Collector power
dissipation
t = 10 s
P
C
(Note 1)
2.5
W
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
2
)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Industrial Applications
Unit: mm
JEDEC ―
JEITA SC-62
TOSHIBA 2-5K1A
Weight: 0.05 g (typ.)
