2N6547
HIGH POW ER NPN SILICON TRANSISTOR
■ STMicr o electronics PREF E RRED
SALESTYPE
■ NPN TRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ HIG H CURRENT CAPAB ILITY
■ FAST SWITCHING SPEED
APPLICATIONS
■ SWITCH MOD E PO W ER SUPPLIES
■ FLYB ACK AND FOR W ARD SING LE
TR A NSI STO R LOW P O WER CO N V ERT E RS
DESCRIPTION
The 2N6547 is a silicon Multiepitaxial Mesa NPN
transistor mounted in TO-3 metal case. It is
particulary intended for switching and industrial
applications from single and tree-phase mains.
INT E R NAL SCH E M ATI C DIAG RA M
October 2001
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CER
Collector-Emitter Voltage (R
BE
= 50 Ω)
850 V
V
CES
Collector-Emitter Voltage (V
BE
= 0) 850 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 400 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 9 V
I
C
Collector Current 15 A
I
CM
Collector Pe ak Cu rrent 30 A
I
B
Base C urrent 4 A
I
BM
Base Peak Current 20 A
P
tot
Total Dissipa tion at T
c
= 25
o
C 175 W
T
stg
Storage Temperature -65 to200
o
C
T
j
Max. Operating Junctio n Te mperature 200
o
C
®
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