2N6059
SILICON NPN POWER DARLINGTON TRANSISTO R
■ STMicrolectronics PREFERRED
SALESTYPE
■ HIGH G AI N
■ NPN DARLINGTON
■ HIGH CURRENT
■ HIGH DISSIPATION
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N6059 is a silicon Epitaxial-Base NPN
transistor in monolithic Darlington configuration
mounted in Jedec TO -3 metal case.
It is inteded for use in power linear and low
frequency switching applications.
INT E R NAL SCH E M ATI C DIAG RA M
February 2003
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value U nit
V
CBO
Collector-Base Voltage (I
E
= 0) 100 V
V
CEX
Collector-Emitter Voltage (V
BE
= -1.5V) 100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 100 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 12 A
I
CM
Collector Peak Current (t
p
< 5 ms) 20 A
I
B
Base Current 0.2 A
P
tot
Total Dissipation at T
c
≤ 25
o
C
150 W
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
R
1
Typ. = 6 KΩ R
2
Typ. = 55 Ω
®
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