November 2011 Doc ID 18363 Rev 2 1/14
14
STL24NM60N
N-channel 600 V, 0.200 Ω, 16 A PowerFLAT™ 8x8 HV
MDmesh™ II Power MOSFET
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Figure 1. Internal schematic diagram
Type
V
DSS
@
T
Jmax
R
DS(on)
max
I
D
STL24NM60N 650 V < 0.215 Ω 16 A
(1)
1. The value is rated according to R
thj-case
3
3
3
'
$
0OWER&,!4X(6
"OTTOMVIEW
Table 1. Device summary
Order code Marking Package Packaging
STL24NM60N 24NM60N PowerFLAT™ 8x8 HV Tape and reel
www.st.com
