AVIONI CS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x . 400 2 LF L (M138)
hermetically sealed
.DESIGNED FOR HIGH POWER PU LSE
I F F , DM E, AND TACAN APPLIC ATI ONS
.2 00 W (ty p. ) IF F 1030 - 1090 M Hz
.150W(min.)DME1025-1150MHz
.1 40 W (ty p. ) TACAN 960 - 1215 MH z
.7.8 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.BALLASTIN G AND LOW THERMAL
RESIST AN C E F OR RELIABI LIT Y AND
RUGGEDNESS
.3 0:1 LOAD VSWR CAPABILITY AT
SPECIF IED OPERATIN G CON D ITION S
.INPUT AND OUTPUT MATCHED,
COMMON BASE CONFIGURATION
DESCRI PT ION
The SD1538-08 is a gold metallized, silicon NPN
power transistor. The SD1538-08 is designed for
applications requiring high peak power and low
duty cycles such as IFF, DME and TACAN. The
SD1538-08 is packaged in a metal/ceramic pack-
age with internal input/output matching, resulting
in improved broadband performance and low ther-
mal resistance.
PIN CO NNECTION
BRANDING
1538-8
ORDER CODE
SD1538-08
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
°
C)
Symb o l Parameter Value Un i t
V
CBO
Collector-Base Voltage 65 V
V
CES
Collector-Emitter Voltage 65 V
V
EBO
Emitter-Base Voltage 3.5 V
I
C
Device Current 11 A
P
DISS
Power Dissipation 583 W
T
J
Junction Temperature +200
°
C
T
STG
Storage Temperature
−
65 to +150
°
C
R
TH(j-c)
Junction-Case Thermal Resistance 0.30 °C/ W
SD1538-08
1. Collector 3. Emitter
2. Base 4. Base
TH ERMA L DATA
September 6, 1994
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