AVIONI CS APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 280 4 L S L (M 1 15)
epoxy sealed
.DESI GN ED FOR HIGH POWER PU LSED
IFF, DME, TACAN APPLICATIONS
.40 WATTS (t y p. ) IFF 1030 - 1090 MH z
.3 5 WATTS ( mi n.) D ME 1025 - 1150 MHz
.2 5 WATTS (t y p.) TACAN 960 - 1215 MH z
.9.0 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.EMI T T ER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.IN FI N ITE LOAD VSWR C APABILI TY AT
SPECIF IED O PERATIN G C ON D ITION S
.IN PUT M ATCH ED , C OM MON BASE
CONFIGURATION
DESCRI PT ION
The SD1530-01 is a gold metallized silicon, NPN
power transistor designed for applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1530-01 is pack-
aged in the .280” input matched stripline package
resulting in improved broadband performance and
a low thermal resistance.
PIN CO NNECTION
BRANDING
1530-1
ORDER CODE
SD1530-01
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
°
C)
Symb o l Parameter Value Un i t
V
CBO
Collector-Base Voltage 65 V
V
CES
Collector-Emitter Voltage 65 V
V
EBO
Emitter-Base Voltage 3.5 V
I
C
Device Current 2.6 A
P
DISS
Power Dissipation 87.5 W
T
J
Junction Temperature +200
°
C
T
STG
Storage Temperature
−
65 to +150
°
C
R
TH(j-c)
Junction-Case Thermal Resistance 2.0 °C/ W
SD1530-01
1. Collector 3. Emitter
2. Base 4. Base
TH ERMA L DA TA
October 11, 1993
rev. 1 1/3
