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参数资料
| 型号： | AUIRGR4045DTR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 12 A, 600 V, N-CHANNEL IGBT, TO-252AA |
| 封装： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件页数： | 1/15页 |
| 文件大小： | 453K |
| 代理商： | AUIRGR4045DTR |
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
AUIRGR4045D
AUIRGU4045D
1
www.irf.com
02/14/11
VCES = 600V
IC = 6.0A, TC = 100°C
VCE(on) typ. = 1.7V
Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5s SCSOA
Square RBSOA
100% of the parts tested for ILM
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
Automotive Qualified*
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
PD - 97637
AUTOMOTIVE GRADE
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
V
IC@ TC = 25°C
Continuous Collector Current
IC@ TC = 100°C
Continuous Collector Current
ICM
Pulsed Collector Current, VGE = 15V
ILM
Clamped Inductive Load Current, VGE = 20V c
A
IF@TC=25°C
Diode Continuous Forward Current
IF@TC=100°C
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
d
Continuous Gate-to-Emitter Voltage
V
Transient Gate-to-Emitter Voltage
PD @ TC =25°
Maximum Power Dissipation
W
PD @ TC =100°
Maximum Power Dissipation
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case - IGBT
e
–––
1.9
RθJC
Junction-to-Case - Diode e
–––
6.8
RθJA
Junction-to-Ambient (PCB Mount) g
–––
50
RθJA
Junction-to-Ambient
–––
110
-55 to + 175
300 (0.063 in. (1.6mm) from case)
± 20
± 30
77
39
°C/W
VGE
600
12
6.0
18
24
8.0
4.0
24
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T
A) is 25°C, unless otherwise specified.
*Qualification standards can be found at http://www.irf.com/
E
G
n-channel
C
GC
E
Gate
Colletor
Emitter
D-Pak
AUIRGR4045D
I-Pak
AUIRGU4045D
G
C
E
G
C
E
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRGU4045D | 12 A, 600 V, N-CHANNEL IGBT, TO-251AA |
| AUIRGR4045D | 12 A, 600 V, N-CHANNEL IGBT, TO-252AA |
| AUIRGR4045DTRL | 12 A, 600 V, N-CHANNEL IGBT, TO-252AA |
| AUIRGR4045DTRR | 12 A, 600 V, N-CHANNEL IGBT, TO-252AA |
| AUIRGS30B60KTRR | 78 A, 600 V, N-CHANNEL IGBT, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRGR4045DTRL | 功能描述:IGBT 晶体管 600V LO VCEON IGBT HALF BRIDGE 2 CH RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| AUIRGR4045DTRR | 功能描述:IGBT 晶体管 600V LO VCEON IGBT HALF BRIDGE 2 CH RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| AUIRGS30B60K | 功能描述:IGBT 晶体管 600V AUTO ULTRAFAST 10-30 KHZ IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| AUIRGS30B60KTRL | 功能描述:IGBT 晶体管 600V AUTO ULTRAFAST 10-30 KHZ IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| AUIRGS30B60KTRR | 功能描述:IGBT 晶体管 600V AUTO ULTRAFAST 10-30 KHZ IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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